Nonlinear behaviors of valence-band splitting and deformation potential in dilute GaNxAs1−x alloys

摘要: Photoreflectance and piezoreflectance investigations have been performed on a series of GaNAs layers grown by low-pressure metal-organic chemical vapor deposition Si-doped GaAs substrate. In addition to the observation fundamental band-gap spin-orbit splitting, valence-band splitting in thin GaNxAs1−x epilayers strained coherently substrate is observed these modulation spectra. Comparing photoreflectance with spectra, we clearly establish transitions involving heavy-hole light-hole bands. We find that increases increasing nitrogen composition, it decreases temperature. point out underlying origin our can be attributed effect lattice mismatch between film also deformation potential does not follow linear interpolation those for GaN. It shows strong composition dependence bowing ...