作者: Z. L. Liu , P. P. Chen , C. Wang , T. X. Li , H. Y. Cui
DOI: 10.1063/1.2736282
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摘要: We report the effect of rapid thermal annealing on valence-band splitting behavior GaNxAs1−x films grown by molecular beam epitaxy. The light- and heavy-hole induced elastic strain is observed in both photomodulated reflectance photoluminescence spectra for as-grown epilayers. energy increases with nitrogen composition. This decreased increase temperature process. These properties have been well explained relaxation model including in-plane at GaAs/GaNAs interface internal GaNAs epilayer. effects confirmed x-ray diffraction Raman measurements.