Two-Color Photoexcitation in a GaNAs/AlGaAs Quantum Well Solar Cell

作者: Martin Elborg , Masafumi Jo , Yi Ding , Takeshi Noda , Takaaki Mano

DOI: 10.1143/JJAP.51.06FF15

关键词:

摘要: We demonstrate an efficient two-color photoexcitation process in a GaNAs/AlGaAs multiple quantum well (MQW) solar cell. The introduction of N into the GaAs MQW induces marked reduction bandgap energy, forming large conduction band offset, and formation localized states. Owning to this deep confinement, thermal escape photogenerated carriers from QWs is greatly suppressed even at room temperature, resulting photocurrent. An additional photocurrent generated by absorption sub-bandgap photons.

参考文章(29)
Z. L. Liu, P. P. Chen, C. Wang, T. X. Li, H. Y. Cui, Y. J. Li, X. S. Chen, W. Lu, Effects of rapid thermal annealing on the properties of GaNxAs1−x Journal of Applied Physics. ,vol. 101, pp. 113514- ,(2007) , 10.1063/1.2736282
H. P. Komsa, E. Larkins, E. Arola, T. T. Rantala, Band offset determination of the GaAs/GaAsN interface using the density functional theory method Journal of Physics: Condensed Matter. ,vol. 20, pp. 315004- ,(2008) , 10.1088/0953-8984/20/31/315004
Masahiko Kondow, Kazuhisa Uomi, Kazuhiko Hosomi, Teruo Mozume, Gas-Source Molecular Beam Epitaxy of GaNxAs1-x Using a N Radical as the N Source Japanese Journal of Applied Physics. ,vol. 33, ,(1994) , 10.1143/JJAP.33.L1056
Ryuji Oshima, Ayami Takata, Yasushi Shoji, Kouichi Akahane, Yoshitaka Okada, InAs/GaNAs strain-compensated quantum dots stacked up to 50 layers for use in high-efficiency solar cell Physica E-low-dimensional Systems & Nanostructures. ,vol. 42, pp. 2757- 2760 ,(2010) , 10.1016/J.PHYSE.2009.12.036
R. B. Laghumavarapu, M. El-Emawy, N. Nuntawong, A. Moscho, L. F. Lester, D. L. Huffaker, Improved device performance of InAs∕GaAs quantum dot solar cells with GaP strain compensation layers Applied Physics Letters. ,vol. 91, pp. 243115- ,(2007) , 10.1063/1.2816904
A. R. Kovsh, J. S. Wang, L. Wei, R. S. Shiao, J. Y. Chi, B. V. Volovik, A. F. Tsatsul’nikov, V. M. Ustinov, Molecular beam epitaxy growth of GaAsN layers with high luminescence efficiency Journal of Vacuum Science & Technology B. ,vol. 20, pp. 1158- 1162 ,(2002) , 10.1116/1.1473176
H Dumont, Y Monteil, F Saidi, F Hassen, H Maaref, L Auvray, Excitons localization effects in GaAsN/GaAs epilayers grown by MOCVD Materials Science and Engineering: C. ,vol. 21, pp. 245- 249 ,(2002) , 10.1016/S0928-4931(02)00074-7
A. Martí, E. Antolín, C. R. Stanley, C. D. Farmer, N. López, P. Díaz, E. Cánovas, P. G. Linares, A. Luque, Production of photocurrent due to intermediate-to-conduction-band transitions : A demonstration of a key operating principle of the intermediate-band solar cell Physical Review Letters. ,vol. 97, pp. 247701- ,(2006) , 10.1103/PHYSREVLETT.97.247701
Jun Shao, Wei Lu, M. Sadeghi, Xiang Lü, S. M. Wang, Lili Ma, A. Larsson, Evolution of valence-band alignment with nitrogen content in GaNAs∕GaAs single quantum wells Applied Physics Letters. ,vol. 93, pp. 031904- ,(2008) , 10.1063/1.2958232
Antonio Luque, Antonio Martí, Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels Physical Review Letters. ,vol. 78, pp. 5014- 5017 ,(1997) , 10.1103/PHYSREVLETT.78.5014