作者: Jun Shao , Wei Lu , M. Sadeghi , Xiang Lü , S. M. Wang
DOI: 10.1063/1.2958232
关键词:
摘要: We report on experimental evidence for the transition of valence-band alignment from type I to II in Ga Nx As1-x GaAs single quantum wells by photoreflectance measurements. The substitutional nitrogen content covers a range 1.4%-5.9%. turning point I-type occurs at x4.7%. observations can be well interpreted combination band anticrossing model and model-solid theory when nonlinear behavior either shear deformation potential or average energy is taken into account. effect dilute offset GaNAsGaAs structure hence clarified. © 2008 American Institute Physics.