Bismuth Effects on Electronic Levels in GaSb(Bi)/AlGaSb Quantum Wells Probed by Infrared Photoreflectance
作者： Xi-Ren Chen , Yu-Xin Song , Liang-Qing Zhu , Zhen Qi , Liang Zhu
DOI: 10.1088/0256-307X/32/6/067301
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摘要: GaSb(Bi)/Al0.2Ga0.8Sb single quantum wells are characterized by a Fourier transform infrared spectrometerbased photoreflectance method at 77 K. Spatially direct and indirect transitions between the electronic levels above effective band gap well resolved. The shifts of with Bi incorporation identified quantitatively. results show that upshift valence edge is clarified to be dominant, while Bi-induced downshift conduction does exist contributes reduction in GaSbBi quantum-well layer (29±6)%.
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