Effect of boron implantation on the electrical and photoelectrical properties of e-beam deposited Ag–In–Se thin films

摘要: In this study, e-beam evaporated Ag‐In‐Se (AIS) thin films were doped by the implantation of boron (B) ions at 75keV with a dose 1 ×10 15 ionscm −2 and subsequent annealing process was applied to AIS different temperatures under nitrogen atmosphere. The effects on electrical photoelectrical properties investigated through temperature dependent conductivity, spectral photoresponse photoconductivity measurements illumination intensities. conductivity showed that room values determined as 2.4 × 10 −7 (� cm) −1 ,1 .7 −6 8.9 −5 for B-doped (B0), annealed 200 ◦ C (B2) 300 (B3), respectively. It observed improved increased up 400 which degenerate semiconductor behaviour. distribution curves indicated three local maxima located 1.63, 1.79 2.01eV B0 type films, 1.65, 1.87 2.07eV B2 1.73, 2.02 2.32eV B3 temperature. These energy ascribed splitting valence band due spin‐orbit interaction crystalline lattice field effects. first each set be gaps films. function intensity performed in order determine nature recombination processes found thermally quenched all types variation photocurrent dependence supralinear. two-centre model successfully explain behaviours