摘要: Currently the main concern in GaAs-based dilute nitride research is understanding of their material properties. There are many contradictory conclusions specially when it comes to origin luminescence efficiency these systems. different ideas have been put forward some more plausible than others. However there a lack new overcome differences. This chapter will address such issues and then finally we study SPSL structures as an alternative random alloy quaternary GaInNAs for efficient growth, design manufacture optoelectronic devices based on alloys. One major current studies metastability material. To rather low solubility N GaAs or GaInAs, non-equilibrium growth conditions required, which can be realized only by molecular-beam epitaxy (MBE) Kitatani et al. (1999); Kondow (1996) metal-organic vapour phase (MOVPE) Ougazazaden (1997); Saito (1998). Growing off thermal equilibrium implies certain degree metastability. The aim growing GaInNAs, emitting at telecommunication wavelengths 1.3 μmand, also 1.55 μm, possible incorporating nearly 40% In several per cent N. These concentrations limits feasibility MBE MOVPE substrates. emission wavelength layers was strongly blue-shifted when, after actual layer, temperature raised AlGaAs-based top (such distributed Bragg reflectors vertical-cavity surface-emitting laser (VCSEL) confinement guiding edge structures). led number annealing yield somewhat results Bhat (1998); Francoeur Gilet (2000); Klar (2001); Li Pan Polimeni Rao Spruytte (2001a); v H G Baldassarri Xin (1999). This, ofcourse, partly due used, but strong manifestation this system. full implications just evolving mechanisms causing blue shift band gap suggested Grenouillet (2002); Mussler (2003); (2001b); Tournie Nevertheless, all discussions investigations, so far, that system very promising candidate telecoms particular datacom applications. However, both GaNAs systems, higher nitrogen incorporation, weaker efficiency. A key utilization nitride-arsenide long obtaining defect materials with non-radiative 0
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