Electronic properties of zinc‐blende GaN, AlN, and their alloys Ga1−xAlxN

摘要: The electronic properties of wide‐energy gap zinc‐blende structure GaN, AlN, and their alloys Ga1−xAlxN are investigated using the empirical pseudopotential method. Electron hole effective mass parameters, hydrostatic shear deformation potential constants valence band at Γ those conduction X obtained for GaN respectively. energies Γ, X, L valleys alloy versus Al fraction x also calculated. information will be useful design lattice mismatched heterostructure optoelectronic devices based on these materials in blue light range application.