Photoluminescence from Cu2ZnSnS4 thin films with different compositions fabricated by a sputtering-sulfurization method
作者： Kunihiko Tanaka , Tomokazu Shinji , Hisao Uchiki
DOI: 10.1016/J.SOLMAT.2014.03.052
关键词: Luminescence 、 CZTS 、 Optoelectronics 、 Analytical chemistry 、 Sputtering 、 Acceptor 、 Doping 、 Photoluminescence 、 Thin film 、 Solar cell
摘要: Abstract Photoluminescence (PL) from Cu 2 ZnSnS 4 (CZTS) thin films fabricated by a sputtering-sulfurization method with considerably different Cu/(Zn+Sn) ratios of 0.60–4.21 and Zn/Sn 0.29–1.68 was investigated respect to the defect physics. The ranges include Cu-poor Zn-rich (Cu/(Zn+Sn)= 0.78 Zn/Sn=1.55) CZTS composition, which is determined as suitable composition for application solar cell absorber. origins luminescence are attributed band-to-impurity (BI), band-to-tail (BT), band-to-band (BB) recombinations at approximately 1.23, 1.35, 1.48 eV, respectively, typically observed heavily doped highly compensated semiconductors result temperature dependence, excitation power spectral shapes PL spectra. Although BT BB band emissions had no strong dependence on film compositions, an intense BI emission dependent Cu/Sn≤2.0. compositional indicates that deep acceptor level formed in Cu/Sn≤2.0, thus considered be range absorber efficient cell.
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