作者: N. Zanfoni , L. Avril , L. Imhoff , B. Domenichini , S. Bourgeois
DOI: 10.1016/J.TSF.2015.05.037
关键词: Thin film 、 Cerium 、 Chemical vapor deposition 、 Materials science 、 Organoplatinum 、 Platinum 、 Oxide 、 Inorganic chemistry 、 Cerium oxide 、 Combustion chemical vapor deposition
摘要: Abstract Thin films of Pt-doped CeO 2 were grown by direct liquid injection chemical vapor deposition on silicon wafer covered native oxide at 400 °C using Ce(IV) alkoxide and organoplatinum(IV) as precursors. X-ray photoelectron spectra evidenced that the platinum oxidation state is linked to way. For deposited top cerium thin previously grown, metallic particles obtained. Cerium codeposition allowed obtaining a Pt 0 2 + mixture with ratio strongly dependent flow rate during deposition. Indeed, lower precursor is, higher is. Moreover, surface cross-sectional morphologies obtained scanning electron microscopy porous layers in any case.