Chapter 5 Scanning Tunneling Microscopy of Defects in Semiconductors
作者： Nikos D. Jäger , Eicke R. Weber
DOI: 10.1016/S0080-8784(08)62978-6
关键词: Optoelectronics 、 Scanning tunneling microscope 、 Scanning ion-conductance microscopy 、 Spin polarized scanning tunneling microscopy 、 Nanotechnology 、 Vibrational analysis with scanning probe microscopy 、 Conductive atomic force microscopy 、 Scanning tunneling spectroscopy 、 Materials science 、 Scanning probe microscopy 、 Scanning capacitance microscopy
摘要: Publisher Summary This chapter discusses scanning tunneling microscopy in semiconductors. The identification of lattice defects semiconductors is a difficult task, as it relies on the interpretation complex and indirect spectroscopic methods, such electron paramagnetic resonance or localized vibrational mode spectroscopy. Scanning probe methods (SPM), especially (STM) ultrahigh vacuum (UHV), offer required atomic resolution, but only for sample surface, not embedded bulk material. surface preparation, typically involving high-temperature heat treatment to prepare an atomically clear prevents extrapolation conclusions from frequently observed point-like defects, missing atoms—vacancies—to their counterparts. Cross-sectional (XSTM) tool that extends STMs unique power, scale study geometric, electronic structure surfaces real space, probing related features, defects.
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