Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs.
作者： R. M. Feenstra , J. M. Woodall , G. D. Pettit
DOI: 10.1103/PHYSREVLETT.71.1176
关键词:
摘要: … The location of this band is close to that for the donor states of an arsenic antisite defect (the … eV in the bulk) [8] separating the two donor levels of the antisite defect, although …
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