Use of deep-level transitions in semiconductor devices

摘要: The invention relates to the design, fabrication, and use of semiconductor devices that employ deep-level transitions (i.e., deep-level-to-conduction-band, deep-level-to-valence-band, or deep-level-to-deep-level) achieve useful results. A principal aspect involves in which electrical transport occurs through a band states just conduction (or valence band), but where significant current does not flow all three bands. This means deep-state is acting as nonradiative trap, rather an energy takes place. Advantageously, energy-band may facilitate radiative transition, either upper lower state optical transition.