Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs
作者： B. Grandidier , Huajie Chen , R. M. Feenstra , D. T. McInturff , P. W. Juodawlkis
DOI: 10.1063/1.123575
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摘要: Scanning tunneling microscopy is used to study low temperature grown (LTG) InGaAs with and without Be doping. The Be-doped material is observed to contain significantly fewer As …
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