Cross‐sectional imaging and spectroscopy of GaAs doping superlattices by scanning tunneling microscopy
作者： R. M. Feenstra , E. T. Yu , J. M. Woodall , P. D. Kirchner , C. L. Lin
DOI: 10.1063/1.107804
关键词:
摘要: The scanning tunneling microscope is used to image GaAs pn‐doping superlattices, cleaved in ultrahigh vacuum. Current‐voltage (I‐V) measurements provide a detailed view of the variation Fermi‐level position across superlattice. I‐V curves show clear signature nondepleted n‐ and p‐type material, with depleted regions appearing at interfaces between layers. number states available for found major source contrast images.
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