Transition-metal dopants in tetrahedrally bonded semiconductors

摘要: It has become increasingly apparent that the future of electronic devices can and will rely on functionality provided by single or few dopant atoms. The most scalable physical system for quantum technologies, i.e. sensing, communication computation, are spins in crystal lattices. Diamond is an excellent host offering long room temperature spin coherence times there been exceptional experimental work done with nitrogen vacancy center diamond demonstrating many forms control. Transition metal dopants have additional advantages, large spin-orbit interaction internal core levels, not present center. This explores implications degrees freedom associated d levels using a tight-binding model Koster-Slater technique. split into two separate symmetry states tetrahedral bonding environments result different wavefunction spatial extents. For 4d semiconductors, e.g. GaAs, this reproduced adding set orbitals location transition impurity modifying hopping parameters from to its nearest neighbors. does case 3d diamond, where no reason drastically alter difference extent as pronounced. In iron gallium arsenide band gap responsible decrease tunneling current when measured scanning microscope due interference between elastic paths comparison measurements calculations provides information regarding material parameters. less distinction levels. When considering pairs important quantity