Divacancy in 4H-SiC.
作者： N. T. Son , P. Carlsson , J. ul Hassan , E. Janzén , T. Umeda
DOI: 10.1103/PHYSREVLETT.96.055501
关键词:
摘要: … For SiC, an unambiguous identification of this defect that has … -SiC [4] and were later shown to be a common defect in as-grown n-type [5] and high-purity semi-insulating (HPSI) [6,7] SiC…
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