Electronic states on the relaxed (110) surface of GaAs
作者： J.R. Chelikowsky , M.L. Cohen
DOI: 10.1016/0038-1098(79)91053-6
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摘要: Abstract The electronic structure of the (110) surface GaAs is analyzed using a relaxation model as determined by recent low energy electron diffraction studies. A self-consistent pseudopotential calculation based on this yields no intrinsic states within fundamental band gap. Moreover, our calculations are in good agreement with photo-emission measurements.
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