Metal-Induced Surface States during Schottky-Barrier Formation on Si, Ge, and GaAs
作者： J. E. Rowe , S. B. Christman , G. Margaritondo
DOI: 10.1103/PHYSREVLETT.35.1471
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摘要: Evidence is reported for extrinsic metal-induced surface states during the early stages of Schottky-barrier formation on Si(111), GaAs(anti 1 anti 1), Ge(111), and Ge(100). Results Ge(110) are related to those Eastman Freeouf (1975) GaAs(110) GaSb(110). A simple structural model proposed account anomalous results (110) semiconductor surfaces. (WDM)
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