Photoluminescence studies of theEL2 defect in gallium arsenide under external perturbations
作者： M. K. Nissen , A. Villemaire , M. L. W. Thewalt
DOI: 10.1103/PHYSREVLETT.67.112
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摘要: The fine structure in the 0.61-eV photoluminescence band from deep defect EL2 semi- insulating GaAs has been studied under uniaxial stress and magnetic field. results show no deviation full T d symmetry hence support isolated-arsenic-antisite model of EL2. Measurements both shift due to hydrostatic component as well g factor final state transition confirm identification this with
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