Native defects in gallium arsenide grown by molecular beam epitaxy and metallorganic chemical vapour deposition: effects of irradiation

摘要: Abstract Gallium arsenide (GaAs), doped n with silicon nominally to 10 15 and 16 cm −3 , grown by molecular beam epitaxy (MBE) metallorganic chemical vapour deposition (MOCVD), was characterized photoluminescence (PL) spectroscopy. In MOCVD GaAs, we found the signature of arsenic antisite (As Ga ) at 0.702 eV, but in MBE GaAs gallium (Ga As 1.441 eV as well site (Si 1.483 eV. We used proton (0.6–10 MeV) irradiation increase number intrinsic defects. The fluence range 13 −2 for 14 GaAs. At low fluences, effect reduce PL intensity, which became 10% 11 12 Annealing samples 550 °C 30 min resulted total recovery intensity only a 70% even these fluences. vacancies (V appeared irradiated samples, higher, never samples. conclude that under rich conditions conditions. material is about ten times more resistant radiation than presence V this may limit optical output devices depending on electron-hole recombination. case as-grown Si lowers recombination efficiency.