AsGa+ antisites identified by electron spin resonance as a main interface defect system in thermal GaAs/native oxide structures

摘要: Aiming to assess the atomic-structural identity of inherently generated interfacial point defects during thermal oxidation, a conventional low-temperature electron spin resonance study has been carried out on (100)GaAs/native oxide structures thermally grown in range 350–615 °C both powders and slices semi-insulating (100)GaAs. This compellingly reveals substantial generation (density ∼ 1 × 1013 cm−2) 75AsGa+ antisites registry with GaAs substrate layer, thus providing solid independent evidence As enrichment, appearing as endemic oxidation GaAs, at same time, an answer how major part excess gets interfacially incorporated. Given known electrical deep double donor attribute AsGa, direct identification is established system detrimental interface traps.