Piezospectroscopic evidence for tetrahedral symmetry of the EL2 defect in GaAs

作者: P. Trautman , J. P. Walczak , J. M. Baranowski

DOI: 10.1103/PHYSREVB.41.3074

关键词: Tetrahedral symmetryPhysicsSemiconductor materialsSymmetry (physics)Condensed matter physicsInorganic compound

摘要: Mesures des decompositions de la raie phonon nul EL2 a 8378 cm −1 sous contrainte uniaxiale appliquee suivant les directions [100], [111] et [110]. Cette est due transition du dipole electrique A 1 →T 2 (ou ). L'etat symetrie necessaire dans l'analyse quantitative observees. Etude comparative avec experiences resonance double nucleaire-electronique

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