On the microscopic structures of three arsenic antisite-related defects in gallium arsenide studied by optically detected electron nuclear double resonance

摘要: Three paramagnetic arsenic antisite-related defects in GaAs, which were produced by low temperature electron irradiation and subsequent annealing, have been studied optically detected resonance (ODEPR) nuclear double (ODENDOR) using the magnetic circular dichroism of optical absorption (MCDA). Its structure models proposed: isolated As antisite defect, next nearest anti-structure pair antisite-arsenic interstitial defect. The latter defect is EL2 also found semi-insulating undoped GaAs. three feature that their (EPR) spectra are identical with exception small differences inhomogeneously broadened line widths they similar metastable properties upon illumination at temperatures. Since there still an ongoing controversy about microscopic since ODENDOR results published only short communications, it purpose this article to show a detailed comparison analysis what one can conclude from these experiments remains for theoretical interpretation.