Metastable state of the EL2 defect in GaAs.

作者: H. J. von Bardeleben

DOI: 10.1103/PHYSREVB.40.12546

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摘要: Cet etat est attribue a l'etat de masse effective A 1 (1s) associe au minimum la bande conduction L. Les resultats apparemment contradictoires obtenus par absorption optique et double resonance nucleaire electronique sur symetrie ponctuelle EL2 trouvent une explication simple dans ce modele

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