Optical activity of theEL2metastable state under hydrostatic pressure
作者： Michał Baj , Piotr Dreszer
DOI: 10.1103/PHYSREVB.39.10470
关键词:
摘要: We present experimental results showing that at hydrostatic pressure exceeding approximately 0.3 GPa the $\mathrm{EL}2$ metastable state becomes optically active in both $n$-type and semi-insulating GaAs, pressure-induced optical recovery (PIOR) can be easily observed. PIOR is practically full extremely efficient (with an efficiency comparable with of photoquenching process). The proper choice energy illuminating light allows reversible cycles subsequent characteristic intra-$\mathrm{EL}2$ absorption 5 K. a few orders magnitude more than pure processes already reported for atmospheric pressure.
harvard.edu
sci-hub.se 参考文章(17)
G. M. Martin, Optical assessment of the main electron trap in bulk semi‐insulating GaAs Applied Physics Letters. ,vol. 39, pp. 747- 748 ,(1981) , 10.1063/1.92852
M. Kaminska, M. Skowronski, J. Lagowski, J. M. Parsey, H. C. Gatos, Intracenter transitions in the dominant deep level (EL2) in GaAs Applied Physics Letters. ,vol. 43, pp. 302- 304 ,(1983) , 10.1063/1.94293
F. Fuchs, B. Dischler, Resolved structure in the quenching band of the EL2 center in GaAs, studied by infrared spectroscopy Applied Physics Letters. ,vol. 51, pp. 2115- 2117 ,(1987) , 10.1063/1.98964
M. Skowronski, J. Lagowski, H. C. Gatos, Metastability of the midgap level EL2 in GaAs: Relationship with the As antisite defect. Physical Review B. ,vol. 32, pp. 4264- 4267 ,(1985) , 10.1103/PHYSREVB.32.4264
Ralph Bray, K. Wan, J. C. Parker, Insights into metastable defects in semi-insulating GaAs from electronic Raman studies on nonequilibrium holes. Physical Review Letters. ,vol. 57, pp. 2434- 2437 ,(1986) , 10.1103/PHYSREVLETT.57.2434
H. J. von Bardeleben, D. Stiévenard, D. Deresmes, A. Huber, J. C. Bourgoin, Identification of a defect in a semiconductor: EL2 in GaAs. Physical Review B. ,vol. 34, pp. 7192- 7202 ,(1986) , 10.1103/PHYSREVB.34.7192
E. R. Weber, H. Ennen, U. Kaufmann, J. Windscheif, J. Schneider, T. Wosinski, Identification of AsGa antisites in plastically deformed GaAs Journal of Applied Physics. ,vol. 53, pp. 6140- 6143 ,(1982) , 10.1063/1.331577
M. Baeumler, U. Kaufmann, J. Windscheif, Photoresponse of the AsGaantisite defect in as‐grown GaAs Applied Physics Letters. ,vol. 46, pp. 781- 783 ,(1985) , 10.1063/1.95908
David W. Fischer, Thermal recovery of photoquenchedEL2 infrared absorption in GaAs Physical Review B. ,vol. 37, pp. 2968- 2972 ,(1988) , 10.1103/PHYSREVB.37.2968
J. C. Parker, Ralph Bray, Analysis of photoassisted thermal recovery of metastable EL2 defects in GaAs. Physical Review B. ,vol. 37, pp. 6368- 6376 ,(1988) , 10.1103/PHYSREVB.37.6368