Theoretical treatments of DX and EL2
作者： M Lannoo
DOI: 10.1088/0268-1242/6/10B/003
关键词: Absorption (electromagnetic radiation) 、 Quantum mechanics 、 Atomic physics 、 Interpretation (model theory) 、 Ground state 、 Duality (optimization) 、 Chemistry
摘要: The available theoretical calculations concerning deep donors in GaAlAs compounds are discussed. duality of the and shallow behaviours is analysed shown to result an inverted A1-T2 splitting for L-derived states. This applied interpretation stress optical absorption EL2. electron-lattice interaction then considered, with a comparison different possible ground state configurations DX. Finally information provided by recent magnetic resonance data taken into consideration conclusions level scheme drawn.
sci-hub.se 参考文章(21)
B. K. Meyer, D. M. Hofmann, J. R. Niklas, J.-M. Spaeth, Arsenic antisite defect AsGa and EL2 in GaAs. Physical Review B. ,vol. 36, pp. 1332- 1335 ,(1987) , 10.1103/PHYSREVB.36.1332
S. B. Zhang, D. J. Chadi, Stability of DX centers in Al x Ga 1 − x As alloys Physical Review B. ,vol. 42, pp. 7174- 7177 ,(1990) , 10.1103/PHYSREVB.42.7174
J. C. Bourgoin, A. Mauger, Physical origin of the DX center Applied Physics Letters. ,vol. 53, pp. 749- 751 ,(1988) , 10.1063/1.99821
M. Kamińska, M. Skowroński, W. Kuszko, Identification of the 0.82-eV electron trap, EL2 in GaAs, as an isolated antisite arsenic defect. Physical Review Letters. ,vol. 55, pp. 2204- 2207 ,(1985) , 10.1103/PHYSREVLETT.55.2204
E. Glaser, T. A. Kennedy, R. S. Sillmon, M. G. Spencer, Symmetry of the Si shallow donor state in AlAs/GaAs and Al x Ga 1-x As/GaAs heterostructures Physical Review B. ,vol. 40, pp. 3447- 3450 ,(1989) , 10.1103/PHYSREVB.40.3447
H. J. von Bardeleben, D. Stievenard, J. C. Bourgoin, A. Huber, Identification of EL2 in GaAs Applied Physics Letters. ,vol. 47, pp. 970- 972 ,(1985) , 10.1063/1.95947
Y. Toyozawa, Electron induced lattice relaxations and defect reactions Physica B-condensed Matter. ,vol. 116, pp. 7- 17 ,(1983) , 10.1016/0378-4363(83)90219-X
P. M. Mooney, T. F. Kuech, U. Kaufmann, W. Wilkening, Strain splitting of theX-conduction-band valleys and quenching of spin-valley interaction in indirect GaAs/AlxGa1−xAs:Si heterostructures Physical Review B. ,vol. 41, pp. 10206- 10209 ,(1990) , 10.1103/PHYSREVB.41.10206
D. J. Chadi, K. J. Chang, Energetics of DX-center formation in GaAs and AlxGa1-xAs alloys. Physical Review B. ,vol. 39, pp. 10063- 10074 ,(1989) , 10.1103/PHYSREVB.39.10063
Gordon Davies, Jahn-Teller coupling at the 1.04-eV EL2-related center in GaAs. Physical Review B. ,vol. 41, pp. 12303- 12306 ,(1990) , 10.1103/PHYSREVB.41.12303