Scanning tunneling microscopy of crystal dislocations in gallium arsenide
作者： G. Cox , D. Szynka , U. Poppe , K. H. Graf , K. Urban
DOI: 10.1103/PHYSREVLETT.64.2402
关键词:
摘要: Dislocations induced by plastic deformation have been studied. Atomically resolved images of perfect and partial dislocations penetrating the cleaved {110} surface were obtained. A Burgers-vector analysis observed was performed. During observation found to be mobile over nm distances. No band bending around dislocation cores indicating that they are essentially electrically neutral
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