Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
作者： Kohei Sasaki , Akito Kuramata , Takekazu Masui , Encarnación G. Víllora , Kiyoshi Shimamura
关键词: Doping 、 Ozone 、 Schottky barrier 、 Materials science 、 Epitaxy 、 Diode 、 Platinum 、 Optoelectronics 、 Breakdown voltage 、 Molecular beam epitaxy
摘要: N-type Ga 2 O 3 homoepitaxial thick films were grown on β-Ga 2 O 3 (010) substrates by ozone molecular beam epitaxy. The epitaxial growth rate was increased by more than ten times …
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