Current Status of Gallium Oxide-Based Power Device Technology
作者： Masataka Higashiwaki , Kohei Sasaki , Man Hoi Wong , Takafumi Kamimura , Ken Goto
DOI: 10.1109/CSICS.2015.7314495
关键词:
摘要: Gallium oxide (Ga2O3) possesses excellent material properties especially for power device applications. It is also attractive from an industrial viewpoint since large-size, high-quality wafers can be manufactured by using simple methods. These two features have drawn much attention to Ga2O3 as a new wide bandgap semiconductor following SiC and GaN. In this report, we describe the recent progress in development on fundamental technologies devices, covering wafer production melt-grown bulk single crystals, homoepitaxial thin-film growth halide vapor phase epitaxy, well processing characterization of metal-oxide-semiconductor field-effect transistors Schottky barrier diodes.
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