A Metal Oxide Heterostructure for Resistive Random Access Memory Devices
作者： Zhao-Liang Liao , Dong-Min Chen , None
DOI: 10.1088/0256-307X/30/4/047701
关键词: Oxygen 、 Resistive random-access memory 、 Optoelectronics 、 Metal 、 Oxide 、 Electrical resistivity and conductivity 、 Heterojunction 、 Oxygen ions 、 Vacancy defect 、 Nanotechnology 、 Materials science
摘要: We propose and investigate a metal oxide heterostructure (MOH) based resistive switching (RS) device. The driving mechanism of in an MOH is more directly related to oxygen ion/vacancy migration around their interface. performance MOH-based RS device depends on the mobility, vacancy concentration as well its relation resistivity. An enhanced ratio high resistance state low can be achieved if two involved oxides are mutually complemental which one them has larger resistivity with increasing while other reverse.
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