Internal photoemission and photoconduction on GeO2/Ge films
作者： Kazuo Oishi , Yasumitsu Matsuo
DOI: 10.1016/0040-6090(95)07093-1
关键词: Condensed matter physics 、 Flat band 、 Photon energy 、 Optics 、 Chemistry 、 Quantum 、 Band diagram 、 Voltage
摘要: The quantum yields η of internal photoemission on a Au/GeO2/Ge layered system was measured for various bias voltages. From the photon energy dependences positive and negative biases, barrier height at GeO2Ge AuGeO2 interfaces determined to be 2.08 eV 1.93 eV, respectively. On basis these results, band diagram flat conditions constructed some discussions were made mechanisms photoconduction films.
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