Improvement in C-V characteristics of Ge metal-oxide semiconductor capacitor by H2O2 incorporated HCl pretreatment
作者： Yoshiki Kamata , Tsunehiro Ino , Masato Koyama , Akira Nishiyama
DOI: 10.1063/1.2857477
关键词:
摘要: Electrical characteristics of high-κ∕Ge metal-oxide semiconductor (MOS) capacitors pretreated with HCl or HF solutions are investigated, including the effect H2O2 incorporation. treatment is more effective than for decreasing equivalent oxide thickness. incorporation into solution leads to dramatic decrease in capacitance at inversion side. We have confirmed that residual metal impurities reduced below 1010atoms∕cm2 on Ge surface after pretreatment mixed and H2O2. conclude responsible superior C-V characteristic MOS capacitor.
harvard.edu
scitation.org
aip.org
sci-hub.se 参考文章(16)
Marcel Pourbaix, Atlas of Electrochemical Equilibria in Aqueous Solutions ,(1974)
Yoshiki Kamata, Yuuichi Kamimuta, Tsunehiro Ino, Ryosuke Iijima, Masato Koyama, Akira Nishiyama, Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO2Gate Dielectrics Japanese Journal of Applied Physics. ,vol. 45, pp. 5651- 5656 ,(2006) , 10.1143/JJAP.45.5651
E. P. Gusev, H. Shang, M. Copel, M. Gribelyuk, C. D’Emic, P. Kozlowski, T. Zabel, Microstructure and thermal stability of HfO2 gate dielectric deposited on Ge(100) Applied Physics Letters. ,vol. 85, pp. 2334- 2336 ,(2004) , 10.1063/1.1794849
Shiyu Sun, Yun Sun, Zhi Liu, Dong-Ick Lee, Samuel Peterson, Piero Pianetta, None, Surface termination and roughness of Ge(100) cleaned by HF and HCl solutions Applied Physics Letters. ,vol. 88, pp. 021903- ,(2006) , 10.1063/1.2162699
ZH Lu, None, Air‐stable Cl‐terminated Ge(111) Applied Physics Letters. ,vol. 68, pp. 520- 522 ,(1996) , 10.1063/1.116386
Yoshihiko Moriyama, Norio Hirashita, Eiji Toyoda, Koji Usuda, Shu Nakaharai, Naoharu Sugiyama, Shin-Ichi Takagi, Study of the Surface Cleaning of GOI and SGOI Substrates for Ge Epitaxial Growth Meeting Abstracts. ,vol. 3, pp. 1183- 1190 ,(2006) , 10.1149/1.2355912
Yoshiki Kamata, Yuuichi Kamimuta, Tsunehiro Ino, Akira Nishiyama, Direct Comparison of ZrO2 and HfO2 on Ge Substrate in Terms of the Realization of Ultrathin High-κ Gate Stacks Japanese Journal of Applied Physics. ,vol. 44, pp. 2323- 2329 ,(2005) , 10.1143/JJAP.44.2323
Kazuo Oishi, Yasumitsu Matsuo, Internal photoemission and photoconduction on GeO2/Ge films Thin Solid Films. ,vol. 274, pp. 133- 137 ,(1996) , 10.1016/0040-6090(95)07093-1
S. Tanuma, C. J. Powell, D. R. Penn, Calculations of electron inelastic mean free paths. V. Data for 14 organic compounds over the 50-2000 eV range Surface and Interface Analysis. ,vol. 21, pp. 165- 176 ,(1994) , 10.1002/SIA.740210302
D. Schmeisser, R.D. Schnell, A. Bogen, F.J. Himpsel, D. Rieger, G. Landgren, J.F. Morar, Surface oxidation states of germanium Surface Science. ,vol. 172, pp. 455- 465 ,(1986) , 10.1016/0039-6028(86)90767-3