Characterization of ultrasharp field emitters by projection microscopy

作者: M.J. Fransen , E.P.N. Damen , C. Schiller , T.L. van Rooy , H.B. Groen

DOI: 10.1016/0169-4332(95)00358-4

关键词: Field electron emissionProjection (set theory)Electron gunCurrent densityFresnel diffractionBrightnessChemistryElectronOpticsMicroscopy

摘要: Abstract The electron optical brightness and the virtual source size of an ultrasharp field emitter were determined by analysis Fresnel fringes occurring in point projection microscopy images. Simulating diffraction pattem taking into account influence size, diameter was as 5.2±1 nm. From additional current density measurements, using same model, reduced calculated. values obtained ranged from 1 × 107 to 3 109 A/m2 · sr V for currents between pA 5 nA. A comparison our results with work other authors is given.

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