Bipolar resistive switching in YMnO3/Nb:SrTiO3 pn-heterojunctions
作者： Agnieszka Bogusz , Danilo Bürger , Ilona Skorupa , Oliver G Schmidt , Heidemarie Schmidt
DOI: 10.1088/0957-4484/27/45/455201
关键词: Optoelectronics 、 Logic gate 、 Resistive touchscreen 、 Materials science 、 Crystallographic defect 、 Depletion region 、 Voltage 、 Thin film 、 Heterojunction 、 Electroforming
摘要: Resistively switching oxides are promising materials for use in electronic applications such as nonvolatile memories, logic gates, and artificial synapses. This work presents the bipolar resistive (BRS) YMnO3/Nb:SrTiO3 pn-heterojunctions. A thermally driven electroforming process is required prior to observed BRS. Results indicate that BRS originates from combined effects of charge trapping detrapping processes along with electro-migration charged point defects depletion layer pn-heterojunction. It shown built-in voltage pn-heterojunctions can be tuned by oxygen partial pressure during growth YMnO3 thin film impacts working parameters resistively cell. study provides a guideline material engineering switches based on
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