Cross-Point Resistive RAM Based on Field-Assisted Superlinear Threshold Selector

作者: Sung Hyun Jo , Tanmay Kumar , Sundar Narayanan , Hagop Nazarian

DOI: 10.1109/TED.2015.2426717

关键词: Leakage (electronics)Resistive random-access memoryPhysicsElectrical engineeringOptoelectronicsHigh selectivityThreshold voltageCross point

摘要: … volatile switching) of a FAST selector can be reduced well <1 … the Ovonic threshold switch has a relatively constant threshold … 6, when optimized, the threshold current of a FAST selector …

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