Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced ON current
作者： J. Frougier , N. Shukla , D. Deng , M. Jerry , A. Aziz
DOI: 10.1109/VLSIT.2016.7573445
关键词: Silicon 、 MOSFET 、 Optoelectronics 、 Current (fluid) 、 Phase transition 、 Node (physics) 、 Electronic engineering 、 Phase (waves) 、 Materials science 、 Electrical resistivity and conductivity 、 Ring oscillator
摘要: … the performance of 14nm node FinFETs. Our analysis shows … FETs using Cu-doped HfO2 threshold switches. Introduction: … 14nm ULP FinFET and Cu-dopedHfO2 based Phase-FET. (b…
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sci-hub.se 参考文章(3)
Nikhil Shukla, Arun V. Thathachary, Ashish Agrawal, Hanjong Paik, Ahmedullah Aziz, Darrell G. Schlom, Sumeet Kumar Gupta, Roman Engel-Herbert, Suman Datta, A steep-slope transistor based on abrupt electronic phase transition Nature Communications. ,vol. 6, pp. 7812- 7812 ,(2015) , 10.1038/NCOMMS8812
Sung Hyun Jo, Tanmay Kumar, Sundar Narayanan, Hagop Nazarian, Cross-Point Resistive RAM Based on Field-Assisted Superlinear Threshold Selector IEEE Transactions on Electron Devices. ,vol. 62, pp. 3477- 3481 ,(2015) , 10.1109/TED.2015.2426717
Larry A. Ladd, William Paul, Optical and transport properties of high quality crystals of V2O4 near the metallic transition temperature Solid State Communications. ,vol. 7, pp. 425- 428 ,(1969) , 10.1016/0038-1098(69)90888-6