Excellent threshold switching device (I off ∼ 1 pA) with atom-scale metal filament for steep slope ( dd = 0.25 V) FET applications
作者： Seokjae Lim , Jongmyung Yoo , Jeonghwan Song , Jiyong Woo , Jaehyuk Park
DOI: 10.1109/IEDM.2016.7838543
关键词:
摘要: To realize a steep-slope-FET with low leakage current and operating bias, we engineered two types of atom-switch devices integrated them silicon MOSFET. The atom-switch-FET exhibits extremely (10−7 μA/μm), high I on /I off ratio (> 107), bias ( Vth, as for optimal performances were investigated at various conditions.
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