Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector–One Resistor Crossbar Array
作者： Chun-Li Lo , Tuo-Hung Hou , Mei-Chin Chen , Jiun-Jia Huang
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摘要: This paper reports on comprehensive analytical and numerical circuit analyses the read margin of one selector-one resistor (1S1R) resistive-switching crossbar array. These are based experimental characteristics 1S1R cells provide a valuable insight into their potential for ultrahigh-density data storage. Three schemes, namely, bit-line pull-up (One-BLPU), all (All-BLPU), partial (Partial-BLPU), investigated. In contrast to One-BLPU scheme, All-BLPU scheme can realize large array 16 Mb, even when line resistance is nonnegligible because effective at sneak current path substantially less sensitive size. Additionally, Partial-BLPU be used reduce power consumption if random access desirable. Finally, effects write margins discussed.
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