Self‐interstitial mechanism for Zn diffusion‐induced disordering of GaAs/AlxGa1−xAs (x=0.1−1) multiple‐quantum‐well structures
作者： Nguyen Hong Ky , JD Ganiere , M Gailhanou , B Blanchard , Lorenzo Pavesi
DOI: 10.1063/1.352883
关键词: Crystallographic defect 、 Raman scattering 、 Scanning electron microscope 、 Analytical chemistry 、 Quantum well 、 Transmission electron microscopy 、 X-ray absorption spectroscopy 、 Raman spectroscopy 、 Photoluminescence 、 Chemistry
摘要: GaAs/AlxGa1−xAs multiple‐quantum‐well (MQW) structures with identical well thicknesses but different Al contents x in the barrier (x≊0.1, 0.2, 0.45, and 1) were grown by molecular‐beam epitaxy to study impurity‐induced disordering mechanism. The of is observed directly transmission electron microscopy on cleaved wedges sample, secondary imaging mode scanning microscopy, secondary‐ion‐mass spectroscopy after Zn diffusions at 575 °C during times (1, 4, 9, 16 h). results show that totally partially disordered regions are always behind diffusion front. extent depends x. As increases, rate increases due increase diffusivity. effect high concentration investigated photoluminescence Raman scattering measurements. systematical analysis spectra MQW diffused for time...
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