作者: S. J. Lycett , A. J. Dewdney , M. Ghisoni , C. E. Norman , R. Murray
DOI: 10.1007/BF02659895
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摘要: We present the results of an investigation impurity free vacancy diffusion (IFVD) post-growth treatments p-i-n modulator structures. The is in two parts. first establish that gallium vacancies (VGa) are produced during IFVD (by measuring intensity low temperature 1.2 eV signal from Si-VGa complexes) a thick Si-doped GaAs sample. second part this work investigates degree intermixing three 80A quantum wells embedded intrinsic region at depths between 1–2 μm surface. Photoluminescence studies on etched samples and cathodoluminescence showed no significant depth dependence occurs as result IFVD.