Enhanced bandgap blue-shift in InGaAsP multiple-quantum-well laser structures by low-temperature-grown InP
作者： A S W Lee , D A Thompson , B J Robinson
DOI: 10.1088/0268-1242/15/12/101
关键词: Blueshift 、 Mineralogy 、 Chemistry 、 Dielectric 、 Band gap 、 Epitaxy 、 Quantum well 、 Molecular beam epitaxy 、 Photoluminescence 、 Optoelectronics 、 Semiconductor laser theory
摘要: Quantum well intermixing (QWI) in an InGaAsP multiple-quantum-well (MQW) laser structure is demonstrated using InP epitaxial layer grown at 300 °C, by gas source molecular beam epitaxy, followed rapid thermal annealing. Photoluminescence used to compare the magnitude of QWI process between low-temperature (LT)- and normal-temperature (NT, 470 °C)-grown layers as a function both anneal temperature time. For example, after 780 °C, large bandgap blue-shift ~197 nm observed MQW structures capped with LT-InP compared ~35 nm shift identical NT-InP. Also, effect capping NT-InP, dielectric (~100 nm SiO2), following 800 °C for 60 s. This shows blue-shifts ~243 ~142 nm, respectively.
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sci-hub.se 参考文章(12)
S. J. Lycett, A. J. Dewdney, M. Ghisoni, C. E. Norman, R. Murray, D. Sansom, J. S. Roberts, Uniform intermixing of quantum wells in p-i-n modulator structures by impurity free vacancy diffusion Journal of Electronic Materials. ,vol. 24, pp. 197- 202 ,(1995) , 10.1007/BF02659895
Y. T. Oh, S. K. Kim, Y. H. Kim, T. W. Kang, C. Y. Hong, T. W. Kim, Carbon impurity effects in Al‐Ga interdiffused GaAs/AlAs multiple quantum wells Journal of Applied Physics. ,vol. 77, pp. 2415- 2418 ,(1995) , 10.1063/1.358767
Shu Yuan, Yong Kim, C. Jagadish, P. T. Burke, M. Gal, J. Zou, D. Q. Cai, D. J. H. Cockayne, R. M. Cohen, Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing Applied Physics Letters. ,vol. 70, pp. 1269- 1271 ,(1997) , 10.1063/1.118549
Alex S. W. Lee, E. Herbert Li, Gamani Karunasiri, Intermixing in strained InGaAs/GaAs quantum-well infrared photodetectors Applied Physics Letters. ,vol. 74, pp. 1102- 1104 ,(1999) , 10.1063/1.123456
P. Chen, A. J. Steckl, SELECTIVE COMPOSITIONAL MIXING IN GAAS/ALGAAS SUPERLATTICE INDUCED BY LOW DOSE SI FOCUSED ION BEAM IMPLANTATION Journal of Applied Physics. ,vol. 77, pp. 5616- 5624 ,(1995) , 10.1063/1.359203
P. Hautojärvi, J. Mäkinen, S. Palko, K. Saarinen, C. Corbel, L. Liszkay, Point defects in III–V materials grown by molecular beam epitaxy at low temperature Materials Science and Engineering B-advanced Functional Solid-state Materials. ,vol. 22, pp. 16- 22 ,(1993) , 10.1016/0921-5107(93)90216-A
P. Dreszer, W. M. Chen, K. Seendripu, J. A. Wolk, W. Walukiewicz, B. W. Liang, C. W. Tu, E. R. Weber, Phosphorus antisite defects in low-temperature InP. Physical Review B. ,vol. 47, pp. 4111- 4114 ,(1993) , 10.1103/PHYSREVB.47.4111
David A. Thompson, John F. Hazell, Alex S. Lee, Tao Yin, Gregory J. Letal, Brad J. Robinson, Nicholas Bertsch, John G. Simmons, New methods of defect-enhanced quantum well intermixing and demonstrated integrated distributed-feedback laser modulator Proceedings of SPIE. ,vol. 4078, pp. 148- 161 ,(2000) , 10.1117/12.392137
N. Cao, B. B. Elenkrig, J. G. Simmons, D. A. Thompson, N. Puetz, Band-gap blue shift by impurity-free vacancy diffusion in 1.5-μm-strained InGaAsP/InP multiple quantum-well laser structure Applied Physics Letters. ,vol. 70, pp. 3419- 3421 ,(1997) , 10.1063/1.118213
B.S. Ooi, C.J. Hamilton, K. McIlvaney, A.C. Bryce, R.M. De La Rue, J.H. Marsh, J.S. Roberts, Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation IEEE Photonics Technology Letters. ,vol. 9, pp. 587- 589 ,(1997) , 10.1109/68.588128