Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation
作者： B.S. Ooi , C.J. Hamilton , K. McIlvaney , A.C. Bryce , R.M. De La Rue
DOI: 10.1109/68.588128
关键词: Band gap 、 Gallium arsenide 、 Slope efficiency 、 Ion implantation 、 Irradiation 、 Materials science 、 Optoelectronics 、 Laser 、 Dielectric 、 Quantum well
摘要: We report the use of a pulsed laser irradiation technique, using multiphoton absorption, to promote quantum-well intermixing (QWI) in double-quantum-well GaAs-AlGaAs structures. The process requires neither ion implantation nor deposition dielectric caps. Differential bandgap shifts up 40 meV have been obtained between control and irradiated samples. Bandgap tuned lasers were fabricated from intermixed samples exhibited negligible changes slope efficiency only small increases (15%) threshold current compared as-grown devices.
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sci-hub.se 参考文章(13)
Roger M Wood, Laser damage in optical materials Adam Hilger. ,(1986)
Frances R. Laughton, John H. Marsh, John S. Roberts, Intuitive model to include the effect of free‐carrier absorption in calculating the two‐photon absorption coefficient Applied Physics Letters. ,vol. 60, pp. 166- 168 ,(1992) , 10.1063/1.106980
J. Ralston, A. L. Moretti, R. K. Jain, F. A. Chambers, Intermixing of AlxGa1−xAs/GaAs superlattices by pulsed laser irradiation Applied Physics Letters. ,vol. 50, pp. 1817- 1819 ,(1987) , 10.1063/1.97707
S. J. Fancey, G. S. Buller, J. S. Massa, A. C. Walker, C. J. McLean, A. McKee, A. C. Bryce, J. H. Marsh, R. M. De La Rue, Time‐resolved photoluminescence microscopy of GaInAs/GaInAsP quantum wells intermixed using a pulsed laser technique Journal of Applied Physics. ,vol. 79, pp. 9390- 9392 ,(1996) , 10.1063/1.362573
C.J. McLean, J.H. Marsh, R.M. De la Rue, A.C. Bryce, B. Garrett, R.W. Glew, Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures Electronics Letters. ,vol. 28, pp. 1117- 1119 ,(1992) , 10.1049/EL:19920705
B. S. Ooi, A. C. Bryce, J. H. Marsh, J. Martin, Transmission electron microscopy study of fluorine and boron implanted and annealed GaAs/AlGaAs Applied Physics Letters. ,vol. 65, pp. 85- 87 ,(1994) , 10.1063/1.113083
A. McKee, C. J. McLean, A. C. Bryce, R. M. De La Rue, J. H. Marsh, C. Button, High quality wavelength tuned multiquantum well GaInAs/GaInAsP lasers fabricated using photoabsorption induced disordering Applied Physics Letters. ,vol. 65, pp. 2263- 2265 ,(1994) , 10.1063/1.112741
J.H. Marsh, A.C. Bryce, Fabrication of photonic integrated circuits using quantum well intermixing Materials Science and Engineering: B. ,vol. 28, pp. 272- 278 ,(1994) , 10.1016/0921-5107(94)90063-9
K. Brunner, G. Abstreiter, M. Walther, G. Böhm, G. Trankle, Optical characterization of GaAs/AlGaAs nanostructures fabricated by focussed laser beam induced thermal interdiffusion Surface Science. ,vol. 267, pp. 218- 222 ,(1992) , 10.1016/0039-6028(92)91124-T
J. E. Epler, R. D. Burnham, R. L. Thornton, T. L. Paoli, M. C. Bashaw, Laser induced disordering of GaAs‐AlGaAs superlattice and incorporation of Si impurity Applied Physics Letters. ,vol. 49, pp. 1447- 1449 ,(1986) , 10.1063/1.97298