Band-gap blue shift by impurity-free vacancy diffusion in 1.5-μm-strained InGaAsP/InP multiple quantum-well laser structure
作者： N. Cao , B. B. Elenkrig , J. G. Simmons , D. A. Thompson , N. Puetz
DOI: 10.1063/1.118213
关键词: Blueshift 、 Optoelectronics 、 Annealing (metallurgy) 、 Laser 、 Wafer 、 Vacancy defect 、 Band gap 、 Gallium arsenide 、 Photoluminescence 、 Materials science
摘要: The effects of defect-enhanced, impurity-free, quantum-well (QW)-barrier compositional intermixing caused by the SiO2 cap annealing at 750 °C a 1.5-μm InGaAsP/InP multiple (MQW) laser structure have been studied photoluminescence (PL). A substantial band-gap blue shift, as much 112 nm (∼66 meV), was found in and value shift can be controlled anneal time. amount does not depend on thickness layer. Ridge-waveguide lasers were fabricated different areas wafer, with without during 60 s anneal. lasing wavelength produced has 78 over that cap.
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