Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth
作者： W. P. Gillin , D. J. Dunstan , K. P. Homewood , L. K. Howard , B. J. Sealy
DOI: 10.1063/1.352884
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摘要: Interdiffusion in InGaAs/GaAs quantum wells has been studied using photoluminescence to follow the development of diffusion with time a single sample. Two distinct regimes are seen; fast initial and second steady‐state diffusion. The was found be dependent on depth well from surface correlate published data indiffusion gallium vacancies into arsenide.
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