Self‐Diffusion of Gallium in Gallium Arsenide

摘要: The self‐diffusion of gallium in arsenide has been studied over the temperature range 1100°–1025°C using radiotracer techniques. Gallium samples were diffused with 72Ga evaporated layers under known pressure arsenic sealed capsules. Following diffusion, removed from surface anodic oxidation followed by oxide dissolution, and the72Ga concentration each layer was measured counting γ‐radiation. This sectioning method, which allows accurate determination very shallow profiles, allowed measurements diffusion coefficient to be made at lower temperatures than those employed Goldstein, significance profile shapes is discussed relation existence possible "tails" profiles. It concluded that there only evidence for a single mechanism studied. Diffusion coefficients obtained 1025°–1100°C are constant 0.75 atm, lead an activation energy order pre‐exponential factor . results comparison previous Goldstein. profiles first reported final gallium.