Effect of vacancy reduction on diffusion in semiconductors
作者： M D Zahari , B Tuck
DOI: 10.1088/0022-3727/15/9/019
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摘要: A fairly simple diffusion mechanism is described in which the concentration of diffusing species relatively high and self-diffusion coefficient host atoms small. Diffusion profiles are computed it shown that anomalous 'double profile' often demonstrated by semiconductor systems can be obtained this means. It suggested may operative when sulphur diffuses into GaAs at temperatures, fitted as closely possible to experimental previously for system. In course fitting procedure estimates made arsenic vacancies, 1120 degrees C.
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