Integration of waveguide-type wavelength demultiplexing photodetectors by the selective intermixing of an InGaAs-InGaAsP quantum-well structure
作者： Deok Ho Yeo , Kyung H. Yoon , Hang Ro Kim , Sung June Kim
DOI: 10.1109/3.922781
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摘要: Using the selective intermixing of an InGaAs-InGaAsP multiquantum-well (MQW) structure, a wavelength demultiplexing photodetector which can demultiplex two widely separated wavelengths was fabricated. An MQW with u-InP cladding layer and n-InGaAs cap layer, grown by metal organic chemical vapor deposition used. Selective area structure done rapid thermal annealing after patterning SiO/sub 2/ dielectric on InGaAs layer. The integrated consists shorter longer sections, absorber section. Shorter sections were intermixed At 1477 nm, output photocurrent ratio enhanced as length region increased over 30 dB observed, while at 1561 18.9 observed.
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M Razeghi, O Acher, F Launay, Disorder of a GaxIn1-xAsyP1-y-InP quantum well by Zn diffusion Semiconductor Science and Technology. ,vol. 2, pp. 793- 796 ,(1987) , 10.1088/0268-1242/2/12/007
W. P. Gillin, D. J. Dunstan, K. P. Homewood, L. K. Howard, B. J. Sealy, Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth Journal of Applied Physics. ,vol. 73, pp. 3782- 3786 ,(1993) , 10.1063/1.352884
J. E. Zucker, B. Tell, K. L. Jones, M. D. Divino, K. F. Brown‐Goebeler, C. H. Joyner, B. I. Miller, M. G. Young, Large blueshifting of InGaAs/InP quantum‐well band gaps by ion implantation Applied Physics Letters. ,vol. 60, pp. 3036- 3038 ,(1992) , 10.1063/1.106775
Deok Ho Yeo, Kyung Hun Yoon, Sung June Kim, None, Characteristics of intermixed InGaAs/InGaAsP Multi-Quantum-Well Structure Japanese Journal of Applied Physics. ,vol. 39, pp. 1032- 1034 ,(2000) , 10.1143/JJAP.39.1032
A.N.M. Masum Choudhury, P. Melman, A. Silletti, E.S. Koteles, B. Foley, B. Elman, Metal-semiconductor-metal demultiplexing waveguide photodetectors in InGaAs/GaAs quantum well structures by selective bandgap tuning IEEE Photonics Technology Letters. ,vol. 3, pp. 817- 820 ,(1991) , 10.1109/68.84504
Jung Woo Park, Hyun Soo Kim, Jung Soo Kim, Dae Kon Oh, Kwang Ryong Oh, Duk Ho Yeo, Sung June Kim, Intermixing Characteristics of Strained InGaAs/InGaAsP Multiple Quantum Well Structure Using Impurity-Free Vacancy Diffusion Japanese Journal of Applied Physics. ,vol. 38, ,(1999) , 10.1143/JJAP.38.L1303
A. Larsson, P.A. Andrekson, S.T. Eng, A. Yariv, Tunable superlattice p-i-n photodetectors: characteristics, theory, and application IEEE Journal of Quantum Electronics. ,vol. 24, pp. 787- 801 ,(1988) , 10.1109/3.195
T. Komukai, T. Yamamoto, T. Sugawa, Y. Miyajima, Upconversion pumped thulium-doped fluoride fiber amplifier and laser operating at 1.47 /spl mu/m IEEE Journal of Quantum Electronics. ,vol. 31, pp. 1880- 1889 ,(1995) , 10.1109/3.469263
Y. Suzuki, R. Ig, T. Yamada, H. Sugiura, M. Naganuma, Crosstalk characteristics of a 1.3-/spl mu/m/1.5-/spl mu/m wavelength demultiplexing photodetector using laser-assisted MOMBE growth Journal of Lightwave Technology. ,vol. 17, pp. 483- 489 ,(1999) , 10.1109/50.749389
K. Kato, S. Hata, K. Kawano, J. Yoshida, A. Kozen, A high-efficiency 50 GHz InGaAs multimode waveguide photodetector IEEE Journal of Quantum Electronics. ,vol. 28, pp. 2728- 2735 ,(1992) , 10.1109/3.166466