Disorder of a GaxIn1-xAsyP1-y-InP quantum well by Zn diffusion
作者： M Razeghi , O Acher , F Launay
DOI: 10.1088/0268-1242/2/12/007
关键词:
摘要: … between the interstitially diffusing Zn ions (Zn:) and vacancies … for GaInAsP-InP QW layers diffused by Zn. The increase of the … associated Zn-vacancy pair formed by substitutional Zn …
harvard.edu
sci-hub.se 参考文章(14)
John Crank, The mathematics of diffusion ,(1956)
M. Razeghi, R. Blondeau, K. Kazmierski, M. Krakowski, B. de Cremoux, J. P. Duchemin, J. C. Bouley, cw operation of 1.57‐μm GaxIn1−xAsyP1−yInP distributed feedback lasers grown by low‐pressure metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 45, pp. 784- 786 ,(1984) , 10.1063/1.95365
R. D. Burnham, N. Holonyak, K. C. Hsieh, R. W. Kaliski, D. W. Nam, R. L. Thornton, T. L. Paoli, Quantum well AlxGa1−xAs‐GaAs lasers with internal (Si2)x(GaAs)1−xbarriers Applied Physics Letters. ,vol. 48, pp. 800- 802 ,(1986) , 10.1063/1.96674
W. D. Laidig, J. W. Lee, P. K. Chiang, L. W. Simpson, S. M. Bedair, Disorder of an InxGa1−xAs‐GaAs superlattice by Zn diffusion Journal of Applied Physics. ,vol. 54, pp. 6382- 6384 ,(1983) , 10.1063/1.331914
D. G. Deppe, K. C. Hsieh, N. Holonyak, R. D. Burnham, R. L. Thornton, Low‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers Journal of Applied Physics. ,vol. 58, pp. 4515- 4520 ,(1985) , 10.1063/1.336265
K. Kazmierski, A. M. Huber, G. Morillot, B. de Cremoux, The Temperature-Dependent Diffusion Mechanism of Zn in InP Using the Semiclosed Diffusion Method Japanese Journal of Applied Physics. ,vol. 23, pp. 628- 633 ,(1984) , 10.1143/JJAP.23.628
M. Razeghi, P. Maurel, F. Omnés, S. Ben Armor, L. Dmowski, J. C. Portal, First observation of the two‐dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 48, pp. 1267- 1269 ,(1986) , 10.1063/1.96999
M. Razeghi, J.P. Duchemin, Recent advances in MOCVD growth of InxGa1-xAsyP1-y alloys Journal of Crystal Growth. ,vol. 70, pp. 145- 149 ,(1984) , 10.1016/0022-0248(84)90260-4
M. Razeghi, J. P. Duchemin, J. C. Portal, Two‐dimensional electron gases in quantum well and superlattices of Ga0.25In0.75As0.50P0.50/InP heterostructures grown by low pressure metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 46, pp. 46- 48 ,(1985) , 10.1063/1.95846
M. D. Camras, N. Holonyak, R. D. Burnham, W. Streifer, D. R. Scifres, T. L. Paoli, C. Lindström, Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion Journal of Applied Physics. ,vol. 54, pp. 5637- 5641 ,(1983) , 10.1063/1.331825