Investigation of the band structure of the strained systems InGaAs/GaAs and InGaAs by high-pressure photoluminescence
作者： V. A. Wilkinson , A. D. Prins , D. J. Dunstan , L. K. Howard , M. T. Emeny
DOI: 10.1007/BF02666010
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摘要: InxGa1-xAs quantum wells grown pseudomorphically in GaAs and AlGaAs with values ofx up to 0.25 have been studied by photoluminescence under high hydrostatic pressure. We concentrate here on the pressure range where emissions quench take characteristics of theX-minima. In InGaAs/GaAs structures, these transitions display an unexpected coefficient, -2.6 meV/kbar, twice that theX minima GaAs. assign wells, therefore make a direct measurement strainedX positions as function composition. InGaAs/AIGaAs structures crossovers occur against theX-minima barriers yield accurate value for band offset ratio heterojunctions which is found be 60:40 (CB:VB).
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